In
this study, surface formation mechanism in micro-grinding of single crystal silicon is investigated based on analysis of undeformed chip thickness hm.A
predicting model of grinding force considering crystallographic effects in
micro-grinding of single crystal silicon is built. In this model,
micro-grinding process of single crystal silicon is divided into two steps by
one line on which hm of single grit equals to lattice constant. Two
micro-grinding experiments with different ranges of cutting depths and feed
rates have been designed and conducted on single crystal silicon to verify the
model this paper proposes. The relationship between micro-grinding parameters
and crack length lc is investigated and the empirical formula of lc is
derived based on analysis of experiment results. Ductile-regime transitions in
micro-grinding process of single crystal silicon have been revealed, 20 nm
and 100 nm are turned out to be two critical conditions based on analysis
of experiment results. It is found that the grinding force has a sudden change
when micro-grinding process comes within material's crystal boundary in
experiment. The force predicting model this paper proposes has well explained
this phenomenon in micro-grinding of single cyrstal silicon. When micro-grinding
undeformed chip thickness hm belows 0.5 nm, micro grinding force
doesn't decrease with the decrease of cutting parameters but has a rising
tendency, and these experimental measurements also provide a support to the
result of model this paper proposes.
Highlights
•
We build a predicting model of micro-grinding force considering
crystallographic effects.
•
We divide micro-grinding process of single crystal silicon into two steps by
lattice constant.
•
Two micro-grinding experiments with different cutting depths and feed rates are
conducted.
•
Empirical formula of lc in
single silicon crystal micro-grinding is derived.
•
Ductile-regime transitions in micro-grinding process of single crystal silicon
are revealed.
Source:
International Journal of Machine Tools and Manufacture
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