This paper reports direct tensile tests on n-type (Si-doped)
gallium nitride single crystal nanowires that were grown by nitrogen
plasma-assisted molecular beam epitaxy and which are essentially free of
defects and residual strain. Nanowires were integrated with actuated, active
microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly
and platinum-carbon clamps created using a gallium focused ion beam. For one
nanowire, failure strain of 0.042 ± 0.011 was found. Most nanowire
specimens appeared to demonstrate tensile strength in the range of
4.0 ± 1.7 GPa to 7.5 ± 3.4 GPa. Failure modes
included clamp failure, transverse (nanowire c-plane) fractures, and insufficient force from the MEMS
test actuator.
Source:
Sensors and Actuators A: Physical
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