High n-type conductivity of melt-grown gallium arsenide single crystals is usually achieved by doping with tellurium or silicon. The lower carrier concentration and Hall mobility in silicon-doped crystals is attributed to the formation of acceptor defects, in particular , the isolated gallium vacancy and the (SiGa–VGa)2- complex. We show that the contamination of the crystals with boron, which is unavoidable in growing techniques using a boron oxide encapsulant, is decisive for the degree of compensation. In highly n-doped gallium arsenide crystals boron is not only incorporated as the isoelectronic defect . Additionally, high concentrations of and the negatively charged BAs-donor complex are formed. These acceptors can dominate the equilibrium of point defects depending on the concentration ratio of the n-dopant and boron.
Physica B: Condensed Matter
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