High n-type conductivity of melt-grown gallium arsenide single crystals is usually achieved by doping with tellurium or silicon. The lower carrier concentration and Hall mobility in silicon-doped crystals is attributed to the formation of acceptor defects, in particular , the isolated gallium vacancy and the complex. We show that the contamination of the crystals with boron, which is unavoidable in growing techniques using a boron oxide encapsulant, is decisive for the degree of compensation. In highly n-doped gallium arsenide crystals boron is not only incorporated as the isoelectronic defect . Additionally, high concentrations of and the negatively charged -donor complex are formed. These acceptors can dominate the equilibrium of point defects depending on the concentration ratio of the n-dopant and boron.
Physica B: Condensed Matter
you need more information about Influence of boron on the point defect
equilibrium in highly n-doped gallium arsenide single crystals, please visit
our website:http://www.qualitymaterial.net, send us email at