Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

High n-type conductivity of melt-grown gallium arsenide single crystals is usually achieved by doping with tellurium or silicon. The lower carrier concentration and Hall mobility in silicon-doped crystals is attributed to the formation of acceptor defects, in particular , the isolated gallium vacancy  and the (Si_Ga–V_Ga)^2-${}_{}{\mathrm{}}_{}{}^{\mathrm{}}$ complex. We show that the contamination of the crystals with boron, which is unavoidable in growing techniques using a boron oxide encapsulant, is decisive for the degree of compensation. In highly n-doped gallium arsenide crystals boron is not only incorporated as the isoelectronic defect . Additionally, high concentrations of  and the negatively charged B_As${\mathrm{}}_{}$-donor complex are formed. These acceptors can dominate the equilibrium of point defects depending on the concentration ratio of the n-dopant and boron.

Source: Physica B: Condensed Matter

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