Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature

Dislocation multiplication in single-crystal silicon during heating and cooling processes was studied by three-dimensional simulation under accurate control of the temperature history. Three different cooling temperature histories were designed. The results showed that the cooling rate in the high-temperature region has a large effect on the final dislocations and residual stress. The most effective method to reduce dislocations is to use a slow cooling rate in the high-temperature region.

Highlights

• 3D simulation of dislocation multiplication in single-crystal silicon was studied.

• Accurate control of temperature history in furnace was numerically implemented.

• Cooling rate in high-temperature region affects dislocations and residual stress.

• Slow cooling in high-temperature region is the best choice.

Source:Journal of Crystal Growth

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