Growth of 2-inch size Ce:doped Lu2Gd1Al2Ga3O12 single crystal by the Czochralski method and their scintillation properties

Highlights

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Pr: (Lu,Y,Gd)₃(Ga,Al)₅O₁₂ single crystals were grown by the m-PD method.

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The grown LGAGG showed light yield of around 25,000 photons/MeV and energy resolution was 9.8%@662 keV.

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The scintillation decay time was 53.6 ns at room temperature.

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The density of LGAGG is theoretically 7.13 g/cm³.

Ce 1% doped Lu₂Gd₁Al₂Ga₃O₁₂ (LGAGG) single crystals with a diameter of 50 mm and length of 150 mm were grown by the Czochralski (Cz) method using an RF heating system. The EPMA techniques is employed to check homogeniousity of chemical composition. Luminescence and scintillation properties were also evaluated. The grown LGAGG showed light yield of around 25,000 photon/MeV and energy resolution was 9.8%@662 keV. The scintillation decay time was 53.6 ns at room temperature.

Keywords

• A2. Single crystal growth; 
• B1.Oxides; 
• B2. Scintillator materials; 
• B3. Scintillators
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• SOURCE:SCIENCEDIRECT
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Measurement of the temperature coefficient of Young's modulus of single crystal silicon and 3C silicon carbide below 273 K using micro-cantilevers

• • Highlights

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    Measurement of the temperature coefficient of Young's modulus of Si in the temperature range of 200–290 K.

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    Measurement of the coefficient of SiC in the range of 210–295 K.

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    Temperature coefficient of Young's modulus of silicon: −52.6 ± 3.45 ppm/K.

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    Temperature coefficient of Young's modulus of silicon carbide: −39.8 ± 5.99 ppm/K.

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    Abstract

    This paper reports on the measurement of the thermal coefficient of Young's modulus of both single crystal silicon and 3C silicon carbide over the temperature range spanning 200–290 K. The thermal coefficients were determined by monitoring the change of resonance frequency of micro-cantilevers as their temperature was reduced. The thermal coefficient of Young's modulus, 1/E · δE/δT was measured to be −52.6 ± 3.45 ppm/K for silicon and −39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical predictions, and also with experimental values that have been previously published for temperatures above 273 K. This work has therefore expanded the temperature range over which the thermal coefficient of Young's modulus has been measured to below 273 K and towards the temperatures required for low-temperature military and space applications.

    Keywords

    
    Single crystal silicon carbide;
  • Young's modulus; 
  • Low temperature; 
  • MEMS cantilever; 
  • Laser vibrometry; 
  • Silicon carbide
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• Soure:Sciencedirect
  
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