Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
Single-crystal growth of β-Ga2O3 was studied by the vertical Bridgman (VB) method.
β-Ga2O3 crystals were grown in platinum–rhodium alloy crucibles in ambient air.
Single crystals with (100) faceted plane were grown without seeding.
Growth direction of the crystals grown was perpendicular to the (100) faceted plane.
A new approach to β-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. β-Ga2O3 single crystals 25 mm in diameter were grown in platinum–rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane.
A2. Bridgman technique;
A2. Growth from melt;
A2. Single crystal growth;
B2. Semiconducting gallium compounds
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