Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air

Highlights

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Single-crystal growth of β-Ga₂O₃ was studied by the vertical Bridgman (VB) method.

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β-Ga₂O₃ crystals were grown in platinum–rhodium alloy crucibles in ambient air.

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Single crystals with (100) faceted plane were grown without seeding.

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Growth direction of the crystals grown was perpendicular to the (100) faceted plane.

Abstract

A new approach to β-Ga₂O₃ single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga₂O₃ melting temperature and investigating the effects of crucible composition and shape. β-Ga₂O₃ single crystals 25 mm in diameter were grown in platinum–rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane.

Keywords

• A2. Bridgman technique; 
• A2. Growth from melt; 
• A2. Single crystal growth; 
• B1. Oxides; 
• B2. Semiconducting gallium compounds
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    Soure:sciencedirect