Synthesis of large single crystals of layered titanosilicate JDF-L1 with orthogonally lamellar architecture

Highlights

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Synthesis of JDF-L1 large single crystals with orthogonally lamellar architecture.

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New observations on phase transformation between ETS-10 and JDF-L1.

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Different effects of K⁺ and F⁻ ions on crystal phase and growth orientation.

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Square sheets with 3-dimensions of ca. 15, 15 and 1.5 µm in orthogonal orientations.

Abstract

Facile procedures were reported for synthesis of sizable lamellar JDF-L1 crystals. Phase transformation between ETS-10 and JDF-L1 was experimentally demonstrated founding on the role of K⁺, Na⁺ and F⁻ ions in crystal growth. Factually, K⁺ ions were confirmed not to participate in the crystal growth of JDF-L1. High concentrations of only Na⁺ and F⁻ ions in initial gels facilitated the formation of lamellar JDF-L1 differing from normal JDF-L1 in crystal morphology and unit-cell dimensions.

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Graphical abstract

Keywords

• Sol–gel preparation; 
• Crystal growth; 
• Intergrowth; 
• Large single crystal; 
• Lamellar texture
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      • • • Soure:sciencedirect

Extreme anisotropy of electromigration: Nickel in single-crystal tin

Highlights

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A new approach is developed to fabricate single-crystal Sn solder joints.

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Grain orientation of solder joints can be artificially controlled.

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Ni₃Sn₄ forms on the surfaces of single-crystal Sn with regularity after electromigration (EM) test.

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Experimental results unequivocally confirm the existence of extremely anisotropic EM system: Ni in single-crystal Sn.

Abstract

A new approach is developed to fabricate single-crystal Sn solder joints with a line-type structure. The primary purpose is to investigate the diffusion characteristics of Ni in single-crystal Sn with four different grain orientations during electromigration. An interesting new experimental phenomenon that Ni₃Sn₄ forms on the surfaces of single-crystal Sn with regularity occurs which should be attributed to the extremely anisotropic diffusion property of Ni in single-crystal Sn. Besides, the diffusion velocity of Ni in single-crystal Sn during electromigration is ranked as followed: (001)> (101)> (301)> (100). Experimental observations are in good agreement with kinetic analysis.

Graphical abstract

Keywords

• Electromigration; 
• Single crystal; 
• Solder; 
• Intermetallics; 
• Anisotropy
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      • • • Soure:sciencedirect

Structure and superconductivity of (Li1−x Fe x )OHFeSe single crystals grown using A x Fe2−y Se2 (A = K, Rb, and Cs) as precursors

Abstract

We present results on the hydrothermal growth of ()OHFeSe single crystals using floating-zone-grown  (A  =  K, Rb, and Cs) as precursors. The growth proceeds by the hydrothermal ion exchange of Li/Fe–O–H for K, Rb, and Cs, resulting in a stacking layer of ()OH sandwiched between the FeSe layers. Optimal growth parameters are achieved using high quality A 0.80Fe1.81Se2 single crystals added to the mixtures of LiOH, H2O, Fe and C(NH2)2Se in an autoclave and subsequently heated to 120 °C for 2 d, to obtain highest quality single crystals. The obtained crystals have lateral dimensions up to centimeters, with the final size related to that of the precursor crystal used. All ()OHFeSe single crystals show a superconducting transition temperature T c  >  42 K, regardless of the phase of the precursor such as superconducting K0.80Fe1.81Se2 (T c  =  29.31 K) or non-superconducting Rb0.80Fe1.81Se2 or poor-superconducting Cs0.80Fe1.81Se2 (T c  =  28.67 K). The T c and transition width ΔT vary in the obtained single crystals, due to the inhomogeneity of the ionic exchange. X-ray diffraction analysis demonstrates that the 245 insulating phase is absent in the ion-exchanged single crystals, while it is observed in the  precursors. Comparative studies of the structure, magnetization, and superconductivity on the parent A 0.80Fe1.81Se2 and the ion-exchanged ()OHFeSe crystals are discussed. A phase diagram including antiferromagnetic spin density wave and superconducting phases is also proposed.

Keywords

• A2. Single crystal growth; 
   
• A2.  OHFeSe ; 
   
• A2. 
 
• single crystal
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    • • • Soure:iopscience

Enhanced mobility in organic field-effect transistors due to semiconductor/dielectric interface control and very thin single crystal

Abstract

A perfect organic crystal while keeping high quality semiconductor/dielectric interface with minimal defects and disorder is crucial for the realization of high performance organic single crystal field-effect transistors (OSCFETs). However, in most reported OSCFET devices, the crystal transfer processes is extensively used. Therefore, the semiconductor/dielectric interface is inevitably damaged. Carrier traps and scattering centers are brought into the conduction channel, so that the intrinsic high mobility of OSCFET devices is entirely disguised. Here, very thin pentacene single crystal is grown directly on bare SiO2 by developing a 'seed-controlled' pentacene single crystal method. The interface quality is controlled by an in situ fabrication of OSCFETs. The interface is kept intact without any transfer process. Furthermore, we quantitatively analyze the influence of crystal thickness on device performance. With a pristine interface and very thin crystal, we have achieved the highest mobility: 5.7 cm2 V−1 s−1—more than twice the highest ever reported pentacene OSCFET mobility on bare SiO2. This study may provide a universal route for the use of small organic molecules to achieve high performance in lamellar single crystal field-effect devices.

Keywords

• A2. Single crystal growth; 
 
• A2.  SiO2 ; 
 
• A2. 
• single crystal
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    • • • Soure:phys

Single crystal growth of type I Na–Si clathrate by using Na–Sn flux

Highlights

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Single crystals of type I Na–Si clathrate, Na₈Si₄₆, were synthesized by using Na–Sn flux.

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Preparation conditions of the single crystals were cleared.

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The details of the crystal growth process were investigated.

Abstract

Single crystals of type I Na–Si clathrate, Na₈Si₄₆, were synthesized by heating Na, Na₄Si₄, and Na₁₅Sn₄ at 723 K under an Ar gas pressure of 10⁴ Pa for 12 h. The single crystals having {110} habit planes grew up to 1.5 mm in size due to Na evaporation from a Na–Si–Sn melt with a starting compositional molar ratio of Na/Si/Sn=5.75:2:1.

Keywords

• A2. Single crystal growth; 
• A2. Growth from solutions; 
• A2. Tin flux growth; 
• B1. Inorganic compounds; 
• B1. Silicon compounds; 
• B1. Clathrate compound
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    • • • Soure:sciencedirect