We applied light scattering tomography (LST), which is powerful for rapid and nondestructive observation of structural defects in semiconductor single crystals, to investigate the defect distribution of 6H-SiC single crystal wafers for the first time. In conventional LST observation, a difference in tomograms between N-doped and semi-insulating 6H-SiC wafers was found. It is caused by the difference in optical absorption and scattered light in wafers. We successfully constructed three-dimensional (3D) LST images of the defects by rendering layer-by-layer two-dimensional (2D) LST images on different planes perpendicular to the direction of crystal growth. The 3D-LST images showed clearly the various defect distributions in depth direction.
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