Monday, November 26, 2018

Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography

We applied light scattering tomography (LST), which is powerful for rapid and nondestructive observation of structural defects in semiconductor single crystals, to investigate the defect distribution of 6H-SiC single crystal wafers for the first time. In conventional LST observation, a difference in tomograms between N-doped and semi-insulating 6H-SiC wafers was found. It is caused by the difference in optical absorption and scattered light in wafers. We successfully constructed three-dimensional (3D) LST images of the defects by rendering layer-by-layer two-dimensional (2D) LST images on different planes perpendicular to the direction of crystal growth. The 3D-LST images showed clearly the various defect distributions in depth direction.


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