The article is devoted to the description of mathematical modelling and attempts to grow silicon single crystals from a pedestal. The crystals are intended to be used for impurity composition testing in rods with a diameter of 300 mm grown with electron beam heating. The testing is being planned both by the method of FTIR spectroscopy and by functional testing of devices that might be manufactured using single crystals grown from pedestal. The article also describes the improvements of equipment, which were necessary for crystal growth attempts, and substantial difficulties that occurred in the process and hindered single crystal growth, allowing to obtain only a polycrystalline sample.
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