The article is devoted to the
description of mathematical modelling and attempts to grow silicon single
crystals from a pedestal. The crystals are intended to be used for impurity
composition testing in rods with a diameter of 300 mm grown with electron beam
heating. The testing is being planned both by the method of FTIR spectroscopy and
by functional testing of devices that might be manufactured using single
crystals grown from pedestal. The article also describes the improvements of
equipment, which were necessary for crystal growth attempts, and substantial
difficulties that occurred in the process and hindered single crystal growth,
allowing to obtain only a polycrystalline sample.
Source:IOPscience
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