Structural and optical properties of LuVO4 single crystals

The synthesis of large single crystals with good optical quality which is a preliminary condition for the practical applications of these materials frequently is complicated. It is found that large LuVO4 single crystals with high optical quality are possible to be prepared using high temperature solution growth method. It is obtained by X-ray crystallographic analysis that the grown crystals possess centrosymmetric tetragonal structure with the point group symmetry D4h and space group I41/amd (zircon-type structure). The unit cell parameters of a = 7.0236 Å, b = 7.0236 Å, c = 6.2293 Å, volume = 307.30(3) Å3 are measured. The crystals composition as well as vanadium oxidation state were measured in order to confirm that the crystal phase is mainly LuVO4. Optical transmission and Raman Spectroscopy are further performed on LuVO4 single crystal to reveal the optical quality and structure details

Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

PVT growth of AlN single crystals with the diameter from nano- to centi-meter level

Physical vapor transport (PVT) is the most successful and widely used approach for bulk aluminum nitride (AlN) single crystals. During the process of PVT growing AlN crystals, crucible materials, the growth setup, and the growth parameters (e.g., temperature distribution, growth pressure) are crucial. This work proposes a detailed study on the PVT growth of single AlN crystals with sizes ranging from nanometers to centimeters. AlN crystals with different sizes are grown by spontaneous nucleation. Furthermore, it discusses and contrasts the growth conditions and mechanisms of AlN crystals with different sizes. The structural and optical properties of the AlN crystals are also involved.

Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method

The noncontact crucible method was used to prepare square Si single bulk crystals. The size of the square part of the ingots was determined by the side-face width of the four-cornered pattern that appeared on the top surface. We obtained square Si single crystals with sizes of 9.4 × 9.7 and 10.9 × 11.0 cm2 that had no fan-shaped {110} faces and had diagonal lengths of up to 91% of the crucible diameter. To obtain large square Si single bulk crystals with a large side-face width using the present method, the importance of establishing a larger low-temperature region in the Si melt while maintaining a smaller initial temperature reduction was considered.

Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com