Physical vapor transport (PVT) is the most
successful and widely used approach for bulk aluminum nitride (AlN) single
crystals. During the process of PVT growing AlN crystals, crucible materials,
the growth setup, and the growth parameters (e.g., temperature distribution,
growth pressure) are crucial. This work proposes a detailed study on the PVT
growth of single AlN crystals with sizes ranging from nanometers to
centimeters. AlN crystals with different sizes are grown by spontaneous
nucleation. Furthermore, it discusses and contrasts the growth conditions and
mechanisms of AlN crystals with different sizes. The structural and optical
properties of the AlN crystals are also involved.
Source:IOPscience
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