Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film

We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.

Source:IOPscience

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Enhanced mobility in organic field-effect transistors due to semiconductor/dielectric interface control and very thin single crystal

A perfect organic crystal while keeping high quality semiconductor/dielectric interface with minimal defects and disorder is crucial for the realization of high performance organic single crystal field-effect transistors (OSCFETs). However, in most reported OSCFET devices, the crystal transfer processes is extensively used. Therefore, the semiconductor/dielectric interface is inevitably damaged. Carrier traps and scattering centers are brought into the conduction channel, so that the intrinsic high mobility of OSCFET devices is entirely disguised. Here, very thin pentacene single crystal is grown directly on bare SiO2 by developing a 'seed-controlled' pentacene single crystal method. The interface quality is controlled by an in situ fabrication of OSCFETs. The interface is kept intact without any transfer process. Furthermore, we quantitatively analyze the influence of crystal thickness on device performance. With a pristine interface and very thin crystal, we have achieved the highest mobility: 5.7 cm2 V−1 s−1—more than twice the highest ever reported pentacene OSCFET mobility on bare SiO2. This study may provide a universal route for the use of small organic molecules to achieve high performance in lamellar single crystal field-effect devices.

Source:IOPscience

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Spectroscopic properties of Nd3+:Lu3ScAl4O12 single crystal

Nd:Lu3ScAl4O12 single crystal has been grown by the Czochralski method. The segregation coefficient of Nd3+ ions in LuSAG crystal is 0.22. X-ray powder diffraction (XRD) experiments show that the Nd:LuSAG crystal crystallizes in cubic structure with space group Ia3d and its cell parameters are a = 1.1953 nm. The absorption and fluorescence spectra of Nd:LuSAG crystal were investigated at room temperature. The spectral parameters were calculated based on Judd–Ofelt (J–O) theory, and the intensity parameters Ω2, Ω4 and Ω6 were obtained to be 0.14, 3.38, and 4.88 × 10−20 cm2, respectively. The calculated spontaneous radiative probabilities, branching ratios, radiative lifetime and quantum efficiency have been evaluated for the 4F3/2 excited state using the calculated intensity parameters. The results indicate that this crystal can be considered as a promising material for solid-state laser application.

Source:IOPscience

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