A perfect organic crystal while keeping high
quality semiconductor/dielectric interface with minimal defects and disorder is
crucial for the realization of high performance organic single crystal
field-effect transistors (OSCFETs). However, in most reported OSCFET devices,
the crystal transfer processes is extensively used. Therefore, the
semiconductor/dielectric interface is inevitably damaged. Carrier traps and
scattering centers are brought into the conduction channel, so that the
intrinsic high mobility of OSCFET devices is entirely disguised. Here, very
thin pentacene single crystal is grown directly on bare SiO2 by developing a
'seed-controlled' pentacene single crystal method. The interface quality is
controlled by an in situ fabrication of OSCFETs. The interface is kept intact
without any transfer process. Furthermore, we quantitatively analyze the influence
of crystal thickness on device performance. With a pristine interface and very
thin crystal, we have achieved the highest mobility: 5.7 cm2 V−1 s−1—more than
twice the highest ever reported pentacene OSCFET mobility on bare SiO2. This
study may provide a universal route for the use of small organic molecules to
achieve high performance in lamellar single crystal field-effect devices.
Source:IOPscience
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