The effect of sintering temperature on the growth of (KNa)NbO (KNN) single crystals fabricated by a solid-state crystal growth method with a sintering aid of 2 wt%CoO and the seed crystals of (110) and (100) KTaO was investigated. For the KNN single crystals fabricated with the (110) KTaO seed crystal, crystal growth length was gradually increased with increasing sintering temperature at the temperatures of 1020 °C–1120 °C. At the temperatures of 1130 °C–1200 °C, rapid growth was observed and a grown single crystal reached the surfaces of the ceramic compact containing the seed crystal. The length of the KNN crystal sintered at 1140 °C for 24 h was 690 μm. On the other hand, such rapid growth was not observed for the KNN single crystals fabricated with the (100) KTaO seed crystal. The length of the KNN crystal sintered at 1140 °C for 24 h was 160 μm. The dielectric, ferroelectric, and piezoelectric properties of the KNN single crystal fabricated with the (110) KTaO seed crystal at a sintering temperature of 1140 °C were reported.
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