XiamenPowerway Advanced Material Co.,Ltd can
offer Single crystal ingot or wafer substrate as follows:
| 1)Single crystal silicon carbide |
| 2"3"4" dia 4H/6H-N |
| Type/ Dopant : N / Nitrogen,Semi-insulating/V |
| Orientation : 4 degree+/-0.5 degree |
| Thickness :(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2 |
| RT:0.01-0.1 Ω·cm,>1E5 Ω·cm |
| Bow/Warp/TTV<25um |
| Double
face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm Packaging:Single wafer box or multi wafer box |
| 2)Single crystal gallium nitride |
| 2"Free-standing GaN substrate |
| Orientation:C-axis(0001)+/-0.5° |
| Conduction Type:N-type |
| Size:(50.8)+/-1mm |
| Thickness:260+/-20um |
| Primary Flat Location:(1-100)+/-0.5° |
| Primary Flat Length:16+/-1mm |
| Primary Flat Location:(1-100)+/-0.5° |
| Secondary Flat Length:6+/-1mm |
| Dislocation Density:<5x106cm-2 |
| Marco Defect Density:A grade<=2cm-2 |
| Resistivity(300K):<0.5Ω·cm |
| TTV:<=15um |
| BOW:<=20um |
| Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished |
| 3)Single crystal germanium |
| 4" N - type Germanium Wafer |
| Orientation : <100> +/- 0.5 degree |
| Type / Dopant : N / Sb;P / Ga |
| Diameter : 100 mm |
| Thickness : 525 +/- 25 um |
| Resistivity : 0.1 ~ 1 ohm-cm;1 ~ 10 ohm-cm |
| Primary flat location : <110>+/-0.5 degree |
| Primary flat length : 32.5 +/-2.5 mm |
| Front surface : Polished |
| Back surface : Etched |
| Edge surface finishing : cylindrical ground |
| Surface roughness ( Ra ) : <=5A |
| EPD : <= 5000 cm-2 |
| Epi ready : yes |
| Package : Single wafer container |
| 2" undoped Germanium Wafer |
| Orientation : <100> +/- 0.5 degree |
| Undoped |
| Diameter : 50.8 +/-0.3 mm |
| Thickness : 500 +/- 25 um |
| Resistivity : >=30 ohm-cm |
| Primary flat location : <110>+/-0.5 degree |
| Primary flat length : 15.88 +/-1.65 mm |
| Front surface : Polished |
| Back surface : Etched |
| Edge surface finishing : cylindrical ground |
| Surface roughness ( Ra ) : <=5A |
| EPD : <= 5000 cm-2 |
| Epi ready : yes |
| Package : Single wafer container |
| 4)Single crystal gallium arsenide |
| 2",3",4"(GaAs) Gallium Arsenide Wafers |
| Conduction Type:SC/n-type or SC/p-type with Zn dope Available |
| Growth Method:VGF |
| Dopant:Silicon/Zn |
| Crystal Orientation:(100)20/60/150 off (110) |
| Carrier Concentration:(0.4~2.5)E18/cm3 |
| Resistivity at RT:(1.5~9)E-3 Ohm.cm |
| Mobility:1500~3000cm2/V.sec |
| Etch Pit Density:<5000/cm2 |
| Thickness:220~450um |
| Surface Finish:P/E or P/P |
| Packaging：Single wafer container or cassette |
| 5)Single crystal CdZnTe |
| Orientation: (211)B,(111)B |
| Size:15mm*15mm±0.05mm(25mm*25mm±0.05mm,30mm*30mm±0.05mm) |
| Doped:Undoped |
| Resistivity:≥1MΩ.cm |
| EPD≤1x105/cm3 |
| Double side polished |
| 6)Single crystal Aluminum Nitride |
| 2”AlN Epitaxy on Sapphire Templates |
| Orientation :C-axis(0001)+/-1° |
| Conduction Type:semi-insulating |
| Diameter:Ф 50.8mm ± 1mm |
| Thickness:(30nm-5um)+/- 10% |
| Substrate:sapphire |
| Orientation Flat:A-plane |
| XRD FWHM of (0002):<200 arcsec. |
| Polishing:Single side Polished,epi-ready |
7)Single crystal silicon
| 6"Si |
| Diameter：150±0.5 mm |
| Thickness：675±15 um |
| Growing method:FZ |
| Orientation:<111> |
| Off-orientation:4±0.5 degree to the nearest <110> |
| Type/Dopant:P/Boron |
| Resistivity:10-20 W.cm |
| RRV:≤15% (Max edge-Cen)/Cen |
| 6"Si |
| Diameter：150±0.2 mm |
| Thickness：525±15 um |
| Growing method:CZ |
| Orientation:<100> |
| Type/Dopant:N/Phosphorus |
| Resistivity:0.1-1 W.cm |
A
single crystal or monocrystalline solid is a material in which the crystal
lattice of the entire sample is continuous and unbroken to the edges of the
sample, with no grain boundaries. The absence of the defects associated with
grain boundaries can give monocrystals unique properties, particularly
mechanical, optical and electrical, which can also be anisotropic, depending on
the type of crystallographic structure. These properties, in addition to making
them precious in some gems, are industrially used in technological
applications, especially in optics and electronics.
Single
crystal silicon is used in the fabrication of semiconductors. On the quantum
scale that microprocessors operate on, the presence of grain boundaries would
have a significant impact on the functionality of field effect transistors by
altering local electrical properties. Therefore, microprocessor fabricators
have invested heavily in facilities to produce large single crystals of
silicon.
If you need more information about single crystal, please visit our website:http://www.qualtiymaterial.net, send us email at powerwaymaterial@gmail.com.
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Soure:PAM-XIAMEN
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If you need more information about single crystal, please visit our website:http://www.qualtiymaterial.net, send us email at powerwaymaterial@gmail.com.
Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
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